发明名称 |
Methods of forming replacement metal gate structures with recessed channel |
摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a transistor comprising a metal gate disposed on a gate dielectric that is disposed on a substrate, and a source/drain region disposed adjacent a channel region of the transistor. The source/drain region comprises a source/drain extension comprising a vertex point, wherein a top surface of the channel region is substantially planar with the vertex point.
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申请公布号 |
US2009302398(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20080157556 |
申请日期 |
2008.06.10 |
申请人 |
SELL BERNHARD;MEHANDRU RISHABH |
发明人 |
SELL BERNHARD;MEHANDRU RISHABH |
分类号 |
H01L29/78;H01L21/28 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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