| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a NAND flash memory which can reduce the interference between adjacent memory cells MC. Ž<P>SOLUTION: The NAND flash memory 100 has a columnar floating gate formed on an element region via a gate insulating film, a diffusion layer formed on regions located on both sides of the floating gate out of the element region, and a control gate formed so as to surround the periphery of the floating gate via an IPD film formed on the side surfaces of the floating gate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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