发明名称 BONGDING METHOD FOR THROUGH-SILICON-VIA BASED 3D WAFER STACKING
摘要 There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bondng is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief.
申请公布号 WO2009146587(A1) 申请公布日期 2009.12.10
申请号 WO2008CN71193 申请日期 2008.06.05
申请人 HONG KONG APPLIED SCIENCE & TECHNOLOGY RESEARCH INSTITUTE CO., LTD;MA, WEI;SHI, XUNQING;CHUNG, CHANG HWA 发明人 MA, WEI;SHI, XUNQING;CHUNG, CHANG HWA
分类号 H01L23/488;H01L25/00 主分类号 H01L23/488
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