ALXGA(1-X)AS SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF ALXGA(1-X)AS SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED

摘要

Disclosed are: an AlxGa(1-x)As (0=x=1) substrate which can keep its transmission property at a high level and enables the production of a device having excellent properties; an epitaxial wafer for an infrared LED; an infrared LED; a method for producing an AlxGa(1-x)As substrate; a method for producing an epitaxial wafer for an infrared LED; and a method for producing an infrared LED. Specifically disclosed is an AlxGa(1-x)As substrate (10a) which is characterized by comprising an AlxGa(1-x)As layer (11) having a main surface (11a) and a rear surface (11b) opposite to the main surface (11a), wherein the content (x) of Al in the rear surface (11b) is higher than that in the main surface (11a) in the AlxGa(1-x)As layer (11).  The AlxGa(1-x)As substrate (10a) may additionally comprise a GaAs substrate (13) which is arranged adjacent to the rear surface (11b) of the AlxGa(1-x)As layer (11).