发明名称 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal by which the melting time of a silicon raw material can be shortened and the service life of a quartz crucible can be extended. Ž<P>SOLUTION: A nonproduct part 9 derived from a silicon single crystal 4 is used in an amount of ≥10 wt.% of the total weight of a silicon raw material being filled into a crucible 1, then the nonproduct part 9 and polycrystalline silicon 8 are melted in the crucible 1 to obtain a melt 3, and thereafter, a silicon single crystal 14 is pulled from the melt 3. Thereby, when the silicon raw material is melted, melting of the whole silicon raw material is facilitated because the nonproduct part 9 melts in an early stage. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009286646(A) 申请公布日期 2009.12.10
申请号 JP20080139123 申请日期 2008.05.28
申请人 SUMCO CORP 发明人 MURAKAMI HIRONORI
分类号 C30B29/06;C30B15/02 主分类号 C30B29/06
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