| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of polishing a silicon wafer by applying a polishing solution substantially containing no abrasive grain onto a surface of a polishing pad having a given fixed grain bonded abrasive and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, the method being characterized in that an excellent polishing speed and polishing precision are obtained and superior flatness is maintained even for a wafer having, particularly, a large diameter. <P>SOLUTION: A hydroplane layer is formed by the polishing solution supplied between the surface of the silicon wafer and the surface of the polishing pad and a thickness of the hydroplane layer is controlled to change a polishing state of the surface of the silicon wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
