| 摘要 |
PURPOSE: A fabricating method of semiconductor die is provided to eliminate the particle attached to the upper side of wafer without the wafer damage by the chemical mechanical polishing device. CONSTITUTION: The photoresist pattern is formed in the upper side of wafer(S1). The ion implantation is performed on wafer by using the photoresist pattern as the barrier(S2). The photoresist pattern is removed through the ashing(S3). The upper side of wafer is polished by the chemical mechanical polishing to remove the particle of the photoresist pattern(S4). In the chemical mechanical grinding step, the slurry of Hydrodynamic lubrication region is used.
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