| 发明名称 |
Method for manufacturing semiconductor device and computer storage medium |
| 摘要 |
A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa.
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| 申请公布号 |
US7629183(B2) |
申请公布日期 |
2009.12.08 |
| 申请号 |
US20060815868 |
申请日期 |
2006.06.12 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;NASU MASAYUKI;SAKODA TOMOYUKI |
| 分类号 |
H01L21/00;C23C16/02;H01L21/316;H01L21/44;H01L21/8242;H01L21/8246;H01L27/105;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/00 |
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