THE METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE IMPROVING COUPLING RATIO

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device capable of improving coupling ratio is provided to perform etching process easily by reducing aspect ratio, by reducing step coverage during etching process to form a contact hole. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(100). An insulation layer pattern(105b) and a tunneling layer pattern(105a) thinner than the insulation layer pattern are formed by etching the insulation layer selectively. The tunneling layer pattern is exposed in a fixed width from both sidewalls of the insulation layer pattern on the tunneling layer pattern. A dielectric layer pattern(145) is formed on the top, the sidewall of the floating gate pattern and on the insulation layer pattern. A conductive film is formed on the dielectric film pattern. The dielectric film pattern is formed with a thickness of 20 to 40 angstorm.