| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to form a tunnel oxide layer with uniform thickness by removing divot generated in removing a pad oxide layer and a nitride layer. CONSTITUTION: A semiconductor substrate(110) comprises an active region and an isolation region, and the active region is formed between the isolation regions. A first isolation layer(120) is formed on the isolation region on the top of the semiconductor substrate. A tunnel oxide layer(130) is formed on the active region on the top of the semiconductor substrate. A second isolation layer(140) is formed on the top of the first isolation layer, and has a step from the tunnel oxide layer. The second isolation layer is projected upward and separates the active region electrically. The divot created in the side of the first isolation layer is removed.</p> |
