| 摘要 |
In a method for forming a pattern of a semiconductor device, an ultra fine pattern is formed using a spacer patterning technology to overcome resolution limits of an exposer. A silicon-containing resist enhancement lithography assisted by a chemical shrink (RELACS) layer is formed with a spin-con-coating method in a track apparatus over a photoresist pattern. As a result, a cross-linking reaction is generated between the RELACS layer and the photoresist patterns to form the spacer, and the spacer is used as a mask in the patterning process.
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