| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an FET having semiconductor layer containing CNT, enabling attaining of high mobility and high on-off ratio, and to reduce the threshold-value voltage and hysteresis. <P>SOLUTION: The FET includes a gate electrode, a gate insulating layer, the semiconductor layer containing carbon nanotubes attached with conjugated polymer on at least a part of the surface thereof, a second insulating layer formed on the semiconductor layer at the side opposite to the gate insulating layer, a source electrode, and a drain electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
