FLIP CHIP LIGHT EMITTING DIODE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To increase a current diffusion effect and improve light emitting efficiency for a flip chip light emitting diode.

SOLUTION: The flip chip light emitting diode forms an n-type nitride semiconductor layer 31, an active layer 32, and a p-type nitride semiconductor layer 33 in sequence on an optically transparent substrate 30 with the predetermined crystal direction. Mesa areas are formed by exposing a plurality of regions of the n-type nitride semiconductor with given widths. A light emitting structure 41 includes grooves formed so that a plurality of regions of the n-type nitride semiconductor layer located among the plurality of mesa areas are exposed with the given widths. The flip chip light emitting diode also includes: a groove insulating layer 34 formed over the surface of the groove; a p-type electrode 38 formed over an insulating layer formed on the upper part of the p-type nitride semiconductor layer and the surface of the groove; and an n-type electrode 39 formed on each of the plurality of mesa areas of the light emitting structure. Each of the plurality of grooves formed in the light emitting structure, is shaped in such a way that an angle formed between a bottom face and a side face of each of the grooves is in the range from 90 degree to 165 degree.

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