发明名称 SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a nonvolatile memory for effectively allocating the number of bits used for parity among a plurality of pages to perform error correction of high correction ability to a page where a bit error occurrence ratio is high. <P>SOLUTION: The semiconductor storage device 300 includes a memory controller 100 and a nonvolatile memory 200. The nonvolatile memory comprises a plurality of pages and stores data and their parity. The memory controller has a function to add the parity to data input by host equipment and store them in the nonvolatile memory when writing data to the nonvolatile memory and, when reading the data, read the data and their parity from the nonvolatile memory to detect an error part and perform data error correction. The memory controller allocates the number of bits of all the parities available on the prescribed number of pages among the plurality of pages storable to the nonvolatile memory to each page in accordance with error occurrence ratio on each page. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009282923(A) 申请公布日期 2009.12.03
申请号 JP20080137059 申请日期 2008.05.26
申请人 TOSHIBA CORP 发明人 ENDO KEIICHIRO
分类号 G06F12/16;G11C16/04;G11C16/06 主分类号 G06F12/16
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