发明名称 |
SELF-ALIGNED THIN-FILM TRANSISTOR AND METHOD OF FORMING SAME |
摘要 |
A method of manufacturing a thin-film transistor or like structure provides conductive "tails" below an overhang region formed by a top gate structure. The tails increase in thickness as they extend outward from a point under the overhang to the source and drain contacts. The tails provide a low resistance conduction path between the source and drain regions and the channel, with low parasitic capacitance. The thickness profile of the tails is controlled by the deposition of material over and on the lateral side surfaces of the gate structure.
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申请公布号 |
US2009294768(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20080130347 |
申请日期 |
2008.05.30 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
LUJAN RENE;WONG WILLIAM S. |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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