发明名称 |
NITRIDE SEMICONDUCTOR LAYER-CONTAINING STRUCTURE, NITRIDE SEMICONDUCTOR LAYER-CONTAINING COMPOSITE SUBSTRATE AND PRODUCTION METHODS OF THESE |
摘要 |
<p>A nitride semiconductor layer-containing structure having a configuration in which: the structure includes a laminated structure based on at least two nitride semiconductor layers; the structure includes between the two nitride semiconductor layers in the laminated structure a plurality of voids surrounded by the faces of the walls inclusive of the inner walls of the recessed portions of the asperity pattern formed on the nitride semiconductor layer that is the lower layer of the two nitride semiconductor layers; and crystallinity defect-containing portions to suppress the lateral growth of the nitride semiconductor layer are formed on at least part of the inner walls of the recessed portions to form the voids.</p> |
申请公布号 |
WO2009145327(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
WO2009JP59919 |
申请日期 |
2009.05.25 |
申请人 |
CANON KABUSHIKI KAISHA;WANG, SHINAN;TAMAMORI, KENJI |
发明人 |
WANG, SHINAN;TAMAMORI, KENJI |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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