发明名称 |
Semiconductor memory device having refresh circuit and word line activating method therefor |
摘要 |
A semiconductor memory device includes a memory cell array having at least one memory bank. The memory bank being divided into memory blocks such that the memory blocks have a block position including at least one edge memory block at an edge of the memory bank and at least one non-edge memory block. Each memory block includes a plurality of memory cells. Each memory cell associated with at least one bit line and at least one word line. The semiconductor memory device includes a refresh execution circuit configured to activate a less than or equal number of word lines one at a time during a refresh operation for the memory cells in the edge memory block as activated one at a time during a refresh operation for the memory cells in the non-edge memory block.
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申请公布号 |
US2009296510(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20090453164 |
申请日期 |
2009.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG-HYUK;OH CHI-SUNG |
分类号 |
G11C7/00;G11C8/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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