| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is mounted in a flip-chip manner using metal joining with high joining strength without reducing mounting reliability. <P>SOLUTION: A metal bump layer including a solder layer 100 used for metal joining and electric connection and a Cu layer 30 due to interdiffusion with the solder layer 100 is deposited on an electrode 2 and a Cu bump 4 provided on a semiconductor substrate 1. <P>COPYRIGHT: (C)2010,JPO&INPIT |
