发明名称 Non-Volatile Memory With Improved Sensing By Reducing Source Line Current
摘要 One or more sense amplifiers for sensing the conduction current of non-volatile memory is controlled by signals that are timed by a reference sense amplifier having similar characteristics and operating conditions. In one aspect, a sensing period is determined by when the reference sense amplifier sensing a reference current detects an expected state. In another aspect, an integration period for an amplified output is determined by when the reference sense amplifier outputs an expected state. When these determined timings are used to control the one or more sense amplifiers, environment and systemic variations are tracked.
申请公布号 US2009296489(A1) 申请公布日期 2009.12.03
申请号 US20090507752 申请日期 2009.07.22
申请人 CERNEA RAUL-ADRIAN 发明人 CERNEA RAUL-ADRIAN
分类号 G11C16/06;G11C7/00;G11C7/06;G11C7/10;G11C11/56;G11C16/04;G11C16/26;G11C16/28 主分类号 G11C16/06
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