发明名称 |
METHOD FOR FORMING DUAL HIGH-K METAL GATE USING PHOTORESIST MASK AND STRUCTURES THEREOF |
摘要 |
Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.
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申请公布号 |
US2009294920(A1) |
申请公布日期 |
2009.12.03 |
申请号 |
US20080132146 |
申请日期 |
2008.06.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;ADVANCED MICRO DEVICES, INC. |
发明人 |
CHUDZIK MICHAEL P.;JHA RASHMI;MOUMEN NAIM;WONG KEITH KWONG HON;TSANG YING H. |
分类号 |
H01L23/58;H01L21/311 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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