| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, formed using a "strained silicon" technology which can attain enhancement of the current driving ability of an NMOS transistor and suppresses the deterioration of the current driving ability of a PMOS transistor, and to provide a production method thereof. SOLUTION: The production method of this semiconductor device includes: forming a silicon nitride film having a thickness of 20 to 80 nm on the whole surface of a silicon substrate 1, for example, by using a PECVD method (plasma-enhanced chemical vapor deposition method) as a liner film 18 under such a film deposition condition for the liner film 18 that the film deposition temperature is 400°C or lower and the tensile stress becomes 0 to 800 MPa; and subjecting the liner film to UV-ray irradiation and/or thermal treatment at 300 to 500°C to contract the film, so that in the liner film 18 in a PMOS region, cracks CR are produced continuously or intermittently, along a sidewall nitride film 14 in an outer side of the sidewall nitride film 14 of a gate electrode 4. COPYRIGHT: (C)2010,JPO&INPIT |
