发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To clean an end surface and a peripheral portion of the backside of a semiconductor substrate by a simple technique in the manufacturing method of a semiconductor device. SOLUTION: The manufacturing method of the semiconductor device comprises a process to hold the edge of a silicon substrate 50, and a process to remove deposited material attached to the backside A of the silicon substrate 50 by brushing the peripheral portion R of the backside A of the silicon substrate 50 using a brush 12, and in the process to remove deposited material, a part of the brush 12 is protruded out of the backside A of the silicon substrate 50. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009283721(A) 申请公布日期 2009.12.03
申请号 JP20080134739 申请日期 2008.05.22
申请人 FUJITSU MICROELECTRONICS LTD 发明人 ITO HIDEKI
分类号 H01L21/768;H01L21/304 主分类号 H01L21/768
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