| 发明名称 |
Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE |
| 摘要 |
A method of reducing junction capacitance and leakage and a structure having reduced junction capacitance and leakage wherein germanium or xenon is implanted in the source and drain regions to at least partially deactivate the dopants in the source and drain regions.
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| 申请公布号 |
US2009294872(A1) |
申请公布日期 |
2009.12.03 |
| 申请号 |
US20080128938 |
申请日期 |
2008.05.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN XIANGDONG;LUO ZHIJIONG;WALLNER THOMAS ANTHONY |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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