| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device that prevents an increase in resistance and penetration of an electrode pad on a surface. <P>SOLUTION: This semiconductor device has a through electrode 5 which is so formed as to penetrate a semiconductor substrate 6, a conductor pad 14 formed on the through electrode 5 and composed of a conductor electrically connected to the through electrode 5, and a wiring layer 3 formed on the surface of the semiconductor substrate 6 and electrically connected with the conductor pad 14. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
