| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a TFT for improving productivity and transistor characteristics, and the TFT. Ž<P>SOLUTION: The method of manufacturing the TFT includes irradiating an amorphous semiconductor film with laser light 10 and reflecting it by a gate electrode 2 to irradiate the amorphous semiconductor film again. Consequently, the amorphous semiconductor film at a part of an interface with a gate insulating film 3 is converted into a microcrystal semiconductor film 4 having crystallinity. Then an impurity element 11 is implanted in the microcrystal semiconductor film 4 so that impurity density continuously and monotonously decreases from a side opposite to the gate electrode 2 toward the gate electrode 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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