发明名称
摘要 <p>New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.</p>
申请公布号 JP2009543159(A) 申请公布日期 2009.12.03
申请号 JP20090519466 申请日期 2007.07.06
申请人 发明人
分类号 G03F7/004;G02F1/361;H01L21/027 主分类号 G03F7/004
代理机构 代理人
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