发明名称 PROCESS FOR GROWING SINGLE CRYSTAL DIAMOND
摘要 PURPOSE: A process for growing single crystal diamond is provided to minimize the temperature difference between diamonds and minimize the temperature change by the plasma contact. CONSTITUTION: The pit(23) having the intaglio pattern corresponding to the mold substrate(21) to the crystalline morphology of the diamond seed(24) is formed. In the diamond seed, the growth is included in the pit of the mold substrate. The quick freeze part(22) controls the temperature of the mold substrate. The mold whole of the substrate is relatively uniformly contacted with the plasma(20). The intaglio pattern of the pit formed in the mold the inverted pyramid or the cubic shape. The diamond seed has the octahedron shape.
申请公布号 KR20090124111(A) 申请公布日期 2009.12.03
申请号 KR20080050117 申请日期 2008.05.29
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 BAIK, YOUNG JOON;PARK, JONG KEUK;LEE, WOOK SEONG
分类号 C30B29/04;C30B25/00 主分类号 C30B29/04
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