| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an InGaAs light-receiving element array which has photosensitivity in a wavelength region exceeding 1.7 μm, with superior responsiveness, and a low dark current, and to provide its fabrication process and a detection apparatus. Ž<P>SOLUTION: The light-receiving element array, where a plurality of light-receiving elements 10 are arranged on an InP substrate 1, comprises an InGaAs light-receiving layer 3 having In composition exceeding 0.53, and an n-type window layer 4, wherein the window layer has an n-type carrier concentration of 1×10<SP>16</SP>/cm<SP>3</SP>or higher; a p-type region 15 forming the pn junction or pin junction 17 in the light-receiving region of the light-receiving element is formed of p-type impurities introduced from the window layer into the InGaAs light-receiving layer; and the p-type region is surrounded by a surrounding region 19 of the n-type carrier concentration in the window layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
