| 摘要 |
<p>PURPOSE: A method of manufacturing the semiconductor resistance device is provided to obtain the stable resistance without the process change of the shape of spacer and polysilicon layer. CONSTITUTION: The poly-silicon(120) is formed in the semiconductor substrate(100) having the active area by the element isolation film. The dopant implanting process is performed within poly-silicon to form the resistance doping implant(160). In order to leave poly-silicon in the region for the resistance unit, the photoresist is used. The poly-silicon is patterned and the gate is formed in the active area of the semiconductor substrate. The spacer oxide layer(200) that surrounds poly-silicon is formed. The spacer(180) is formed in the side wall of the poly-silicon including the spacer oxide layer.</p> |
