NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nonvolatile semiconductor memory device and manufacturing method thereof are provided to continuously keep data by using the resistance changeable material. CONSTITUTION: The insulating layer(110) comprises the resistance alteration material which is formed on the substrate(100), and in which the resistance value is changed according to the electric signal. The floating body cell(120) is formed on the insulating layer. The source(123) and drain(125) are formed in both sides of floating body cell on the insulating layer. The gate(130) is formed on the floating body cell. The gate isolation layer is formed between the gate and floating body cell. The floating body cell is formed so that hole is accumulated in the electric power supply.