FLASH MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A flash memory device and a manufacturing method thereof are provided to overcome the integration limit due to a memory device according to the limit of a substrate surface by integrating cell transistors in a vertical direction to a substrate surface. CONSTITUTION: A cell stack(150) is formed by repeatedly stacking a semiconductor layer(130) and interlayer isolation layers(140). The semiconductor layer is formed with the stripe type to extend junction regions(131) to the cell string direction. The junction region sets the region between the mutual regions of the junction region to the channel regions. The interlayer isolation layer insulates the semiconductor layer. The bit line connected to the junction region is buried in the interlayer isolation layer to be extended to the vertical direction to the cell string direction. The arrangement of a gate column(180) passes through the cell stack and is vertical to the substrate and divides the junction regions into both sides. A trap layer stack(170) is introduced to the interface between a gate column and a cell stack to store the charge.