发明名称 |
METHODS AND APPARATUS FOR EPITAXIAL FILM FORMATION |
摘要 |
In a first aspect, a first system is provided for semiconductor device manufacturing. The first system includes (1) an epitaxial chamber adapted to form a material layer on a surface of a substrate; and (2) a plasma generator coupled to the epitaxial chamber and adapted to introduce plasma to the epitaxial chamber. Numerous other aspects are provided. |
申请公布号 |
EP1945836(A4) |
申请公布日期 |
2009.12.02 |
申请号 |
EP20060825564 |
申请日期 |
2006.10.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MOFFATT, STEPHEN;SANTIAGO, JAMES |
分类号 |
C30B15/14;H01L21/00 |
主分类号 |
C30B15/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|