| 摘要 |
PURPOSE: An electrostatic discharge device is provided to improve a current driving performance of a diode by adding a diode to an SCR(Silicon Controlled Rectifier) when the negative static electricity is applied. CONSTITUTION: An N well(32) is formed between P wells(31,33). A P type impurity area(41) of the N well and an N type impurity area(43), and a P type impurity area(45) of the P well PN junction diode comprises a PN junction diode. The P type impurity area is operated as an anode and the N type impurity area is operated as a cathode. If an excessive static electricity is inputted through a ground voltage pad, the diode is operated by inputting the current from the P type impurity area to the N type impurity area. The current driving performance is improved by forming two current paths.
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