PHASE CHANGE MEMORY DEVICE AND WRITE METHOD THEREOF

摘要

PURPOSE: A phase change memory device and a writing method thereof are provided to increase durability by preventing characteristic deterioration of a phase-change memory cell irrespective of repetitive writing of reset data. CONSTITUTION: It is determined whether write data to be written in a selected phase-change memory cell is set data or reset data(S10). Write data corresponding to the set data offers a pulse for writing the set data to the phase-change memory cell. A write operation of the set data having no write verification operation is performed(S50). Write data corresponding to the reset data performs a write-write verification loop. A level of a pulse corresponding to an initial reset status is offered at a level lower than a pulse for writing general reset data(S20). A write verification operation for the reset data is performed(S30). A pulse having a level increased more than a previously applied pulse is provided to the selected phase-change memory cell(S40).