发明名称 |
ACTIVE MATRIX SUBSTRATE |
摘要 |
<p>In an active-matrix substrate (100) according to the present invention, a semiconductor layer (110) has a first gettering region (112) adjacent to the source region (132) of a first thin-film transistor (130), a second gettering region (114) adjacent to the drain region (146) of a second thin-film transistor (140), and a third gettering region (116) adjacent to any of the source and drain regions located between the respective channel regions (134 and 144) of the first and second thin-film transistors (130 and 140) among the source and drain regions of the thin-film transistors included in the thin-film transistor element (120).</p> |
申请公布号 |
EP2128898(A1) |
申请公布日期 |
2009.12.02 |
申请号 |
EP20080721110 |
申请日期 |
2008.02.29 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MORIYA, YOSHIMIZU;NAKAJIMA, MUTSUMI;KAISE, YASUYOSHI;KITA, MAKOTO;MATSUKIZONO, HIROSHI;ITOH, YOSHIYUKI |
分类号 |
H01L21/336;G02F1/1368;G09F9/30;H01L21/20;H01L21/322;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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