METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating semiconductor device is provided to prevent the excessive diffusion in the thermal process and to prevent the punch through. CONSTITUTION: The silicon substrate(200), and the laminating structure of the silicon layer(210a) and buried insulating layer are formed. The gate pattern(220) is formed on the silicon layer. The spacer(225) is formed in the gate pattern side wall. The silicon layer exposing between the gate patterns is etched to expose the buried insulating layer. The polysilicon layer is formed in the whole upper unit including the etched silicon layer. The thermal process is formed on the silicon layer to form the source/drain region.