摘要 |
<p>A method of measuring or a semiconductor arrangement comprising a semiconductor body CP, a first KI1, KU1 and a second KI2, KU2 contact area, each made in two parts and located on the semiconductor body CP, a first 10 and a second 20 terminal that contacts both parts of the first KI1, KU1 and second KI2, KU2 contact areas and a first 30 and a second 40 test terminal. The semiconductor arrangement can be used to measure a low resistance between the first 10 and second 20 terminals by impressing a measurement current I at the first terminal 10, measuring a voltage U between the first 30 and second 40 test terminals and taking the quotient of the current I and voltage U. The semiconductor body CP may also comprise a cover layer S. The first 10 and second 20 terminals may be made as solder balls. The parts of the first KI1, KU1 and second KI2, KU2 contact areas may comprise a smaller (KU1, KU2) area that is electrically insulated from a larger (KI1, KI2) area. The semiconductor body CP may have an electronic component DUT e.g. transistor, diode or integrated circuit and a multiplexer component (MUX, fig. 3B).</p> |