发明名称 |
Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures |
摘要 |
A method according to the invention enables first and second active zones to be produced on a front face of a support, which said zones are respectively formed by first and second monocrystalline semi-conducting materials that are distinct from one another and preferably have identical crystalline structures. The front faces of the first and second active zones also present the advantage of being in the same plane. Such a method consists in particular in producing the second active zones by a crystallization step of the second semi-conducting material in monocrystalline form, from patterns made of second semi-conducting material in polycrystalline and/or amorphous form and from interface regions between said patterns and preselected first active zones. Moreover, the support is formed by stacking of a substrate and of an electrically insulating thin layer, the front face of the electrically insulating thin layer forming the front face of the support.
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申请公布号 |
US7625811(B2) |
申请公布日期 |
2009.12.01 |
申请号 |
US20060584635 |
申请日期 |
2006.10.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;STMICROELECTRONICS SA |
发明人 |
BARBE JEAN-CHARLES;CLAVELIER LAURENT;VIANAY BENOIT;MORAND YVES |
分类号 |
H01L21/20;H01L21/36;H01L21/8238 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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