发明名称 Voltage programming switch for one-time-programmable (OTP) memories
摘要 In one embodiment, the invention is an integrated circuit (IC) including an OTP memory and conditioning circuitry. The IC receives an externally-generated DC programming voltage signal that the conditioning circuitry transforms into a programming pulse signal for programming the OTP memory. The conditioning circuitry includes: (i) reset protection circuitry for holding the programming pulse signal low if the IC is powering up, (ii) an overvoltage protection circuit for substantially preventing the programming pulse voltage from exceeding predefined boundaries, and (iii) a conversion switch for controlling the programming pulse voltage. The programming pulse voltage is (i) substantially equivalent to the externally-generated DC voltage if an enable signal is on, and (ii) substantially equivalent to a reference voltage if the enable signal is off.
申请公布号 US7626845(B2) 申请公布日期 2009.12.01
申请号 US20060610284 申请日期 2006.12.13
申请人 AGERE SYSTEMS INC. 发明人 HOLDER, JR. CLINTON H.;LEE KANG W.;SIMKO JOSEPH E.;SMOOHA YEHUDA;ZHU YING
分类号 G11C17/00 主分类号 G11C17/00
代理机构 代理人
主权项
地址