| 摘要 |
PURPOSE: A manufacturing method of a saddle type pin transistor is provided to effectively form a saddle type fin structure by injecting an ion into Y direction about a recessed active region. CONSTITUTION: A recess is formed by etching a gate region in an active region(100) defined by an isolation film. A scattering effect preventing film(130) is formed on a surface of the recess. A field oxide film(110) is formed in order to fill an inner part of an isolation trench. A first ion is injected to a bottom part of the recess. A second ion is injected to a boundary part of the active region and the isolation film. The scattering effect preventing film is removed. A boron ion injection region(140) is formed by injecting boron to a channel region.
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