| 摘要 |
PURPOSE: A method of forming an isolation layer for a semiconductor device is provided to prevent the deterioration of an electrical characteristic of the semiconductor device by making etching speed of an antireflection film and an isolation layer the same or etching them under same etch conditions. CONSTITUTION: In a method of forming an isolation layer for a semiconductor device, a trench(Tc) is formed in a semiconductor substrate(100). The inside of the trench is filled with an insulating layer(102a), and the mobility reflection barrier layer(110a) is formed on the top of the semiconductor substrate including the insulating layer. A reflection barrier layer and insulating layer is etched in first. The insulating layer is formed with a flow dielectric(108a) and is formed with an SOD(spin on dielectric) film.
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