Methods of forming zirconium aluminum oxide

摘要

A dielectric layer having atomic layer deposited zirconium aluminum oxide and a method of fabricating such a dielectric layer may produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The zirconium aluminum oxide may be formed in an atomic layer deposition process that includes pulsing a zirconium-containing precursor onto a substrate and pulsing an aluminum-containing precursor.