发明名称 Semiconductor memory device and its driving method
摘要 A semiconductor memory device includes a data transfer line for read, a data signal transfer unit, a reset controller, and a data signal transfer unit for write. The data signal transfer unit for read receives a first data signal corresponding to a read command via the data transfer line and outputs the first data signal. The reset controller resets the data transfer line in response to a reset signal. The data signal transfer unit for write receives a second data signal corresponding to a write command, and outputs the second data signal to the data transfer line. The data transfer line is reset in response to the reset signal.
申请公布号 US7626872(B2) 申请公布日期 2009.12.01
申请号 US20070824314 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HA SUNG-JOO
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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