| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain an MTJ device having a high TMR value and a low RA. <P>SOLUTION: A method for producing a magnetoresistive element includes a tunnel barrier forming step comprising: a metal layer forming step of forming a metal layer to a first thickness; a plasma treatment step of performing plasma treatment in which the metal layer is exposed to a plasma of an inert gas to etch the metal layer to a second thickness smaller than the first thickness; and an oxidizing step of oxidizing the metal layer subjected to the plasma treatment to form a metal oxide that constitutes a tunnel barrier. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
