VAPOUR DEPOSITION PROCESS AND DEVICE

摘要

A vapour deposition process and a device for applying a deposit on a foil substrate (4) by chemical vapour deposition wherein a flow of precursor gases in a reaction chamber (12) is guided over the substrate, and wherein the reaction chamber is formed by a gap (12) between a curved surface (5) supporting the substrate (4), and a guiding surface (9), wherein the gas flows through the gap (12) from a slit shaped precursor gas inlet (10) to a slit shaped outlet (11), the inlet and the outlet having a width corresponding to the width of the reaction, chamber.