| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask creating method for enabling provision of a mask with desired dimensions by dry etching without recreating a mask. <P>SOLUTION: The mask creation method includes: preparing pattern density and conversion difference, which is a past result of etching conditions by a dry etching device; deriving a dependency tendency coming from a relationship of the pattern density and conversion difference based on the pattern density and the conversion difference; calculating a pattern density of a product for which a mask is created from design data; determining a conversion difference from the calculated pattern density and the dependence tendency; using the conversion difference to design pattern dimensions for the mask; and creating a mask based on the design. The pattern density means a percentage of a total opening area of the pattern to a total area of a wafer, while the conversion difference means a difference between the dimensions of a resist pattern and dimensions of the obtained pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT |
