| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an acting electrode capable of manufacturing the acting electrode in which an increase in internal resistance due to the partial presence of an electrolyte when used for a photoelectric conversion element is prevented by a simple method, by eliminating nonuniformity of a surface irregularities of an oxide semiconductor porous layer. <P>SOLUTION: This manufacturing method of the acting electrode includes a process of forming the oxide semiconductor porous layer 21 on a transparent conductive substrate 10 by a lithographic printing method, a process of flattening its upper surface by uniformizing the thickness of the oxide semiconductor porous layer by pressing the upper surface of the oxide semiconductor porous layer by a plate by arranging the plate 60 having a die separable characteristic above the transparent conductive substrate via a spacer 61, a process of drying the oxide semiconductor porous layer in a state of pressing the upper surface of the oxide semiconductor porous layer by the plate, and a process of removing the plate after drying the oxide semiconductor porous layer and baking. <P>COPYRIGHT: (C)2010,JPO&INPIT |
