| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To precisely etch a semiconductor wafer. <P>SOLUTION: A mixed gas containing hydrogen fluoride and ozone is jetted to a semiconductor wafer surface, which then is monitored to control concentration of hydrogen fluoride and/or ozone on the basis of a monitoring result. An etching device for semiconductor wafer includes a monitor device that monitors the semiconductor wafer surface, a nozzle jetting the mixed gas containing the hydrogen fluoride and ozone, and an adjuster adjusting the concentration of the hydrogen fluoride and/or the ozone. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
