| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor having high carrier mobility, high response speed, high robustness and high heat resistance. SOLUTION: This thin film transistor includes: a source electrode; a drain electrode provided separately from the source electrode; a semiconductor layer electrically connected to the source electrode and the drain electrode; an insulating layer; and a gate electrode provided in a state insulated from the semiconductor layer, the source electrode and the drain electrode by the insulating layer. At least any one of the source electrode, the drain electrode and the gate electrode includes a metallic carbon nanotube structure. COPYRIGHT: (C)2010,JPO&INPIT |
