| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress stress generated between a semiconductor substrate and a compound semiconductor layer stacked thereupon. Ž<P>SOLUTION: A semiconductor light-emitting device comprises: the semiconductor substrate 11; the compound semiconductor layer 12 formed on a first surface S1 of the semiconductor substrate 11; a ridge-shaped first stripe portion 14 formed on the compound semiconductor layer 12; resonance surfaces 21 and 22, formed opposite in a sectional direction perpendicular in the length direction of the first stripe portion 14; a ridge-shaped second stripe portion 16 formed on the side of a second surface S2 of the semiconductor substrate 11 on the opposite side from the first surface S1, at a position opposed to the first stripe portion 14; and second groove portions 15, formed on the side of the second surface S2 of the semiconductor substrate 11 on both sides of the second stripe portion 16. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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